| PART |
Description |
Maker |
| IRF6655 |
V(dss): 100V; 8.7nC; directFET power MOSFET
|
International Rectifier
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRC503 IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A)
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
Power MOSFET(Vdss=100V Rds(on)=0.16ohm Id=14A)
Hexfet? Power MOSFET
|
IRF[International Rectifier]
|
| IRF150 JANTXV2N6764 JANTX2N6764 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)
TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A)
|
IRF[International Rectifier]
|
| IRF9510 |
CAP CERAMIC 4.7PF 25V C0G 0201
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-4.0A)
|
IRF[International Rectifier]
|
| IRF9540N IRF9540 IRF9540NPBF |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
|
IRF[International Rectifier]
|
| IRL530NLPBF IRL530NSPBF IRL530NPBF |
Adavanced Process Technology
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.10ヘ , ID=17A )
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.10Ω , ID=17A )
|
International Rectifier
|
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRFR120PBF IRFU120PBF |
HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.27Ω , ID = 7.7A )
HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.27ヘ , ID = 7.7A )
|
International Rectifier
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| IRF540NL IRF540NS IRF540NSTRR IRF540NLPBF IRF540NS |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)
Power MOSFET(Vdss=100V/ Rds(on)=44mohm/ Id=33A)
|
IRF[International Rectifier]
|
| IRF510S IRF510STRL IRF510STRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
|
IRF[International Rectifier]
|
